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| High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 2.7 W Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C Maximum Ratings 600 600 20 30 75 40 150 ICM = 80 @ 0.8 VCES 10 280 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C * International standard packages * Guaranteed Short Circuit SOA capability * Low VCE(sat) - for low on-state conduction losses * High current handling capability * MOS Gate turn-on - drive simplicity * Fast Fall Time for switching speeds up to 50 kHz Applications * AC and DC motor speed control * Uninterruptible power supplies (UPS) * Welding Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * High power density Features G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH) TO-268 (D3) ( IXST) 1.13/10 Nm/lb.in. 6 300 g C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 7 25 1 100 2.2 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98521B (7/00) (c) 2000 IXYS All rights reserved 1-2 IXSH 40N60B IXST 40N60B Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 3700 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 80 190 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 90 50 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 W 50 110 120 1.8 55 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W 170 1.7 190 180 2.0 200 200 2.6 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.45 K/W (IXSH40N60B) 0.25 K/W Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXSH) Outline gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 1.5 2.49 TO-268AA (D3 PAK) Dim. Min. Recommended Footprint A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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